Location History:
- Tbilisi, RU (1997)
- Paliashvili, GE (1998)
Company Filing History:
Years Active: 1997-1998
Title: G S Karumidze: Innovator in N-Type Semiconducting Diamond Technology
Introduction
G S Karumidze is a notable inventor based in Tbilisi, Russia. He has made significant contributions to the field of semiconductor technology, particularly in the development of n-type semiconducting diamonds. With a total of 2 patents to his name, his work is paving the way for advancements in this specialized area.
Latest Patents
Karumidze's latest patents focus on a method for producing n-type semiconducting diamond. This innovative method involves doping the diamond with boron-10 during its formation and subsequently bombarding it with neutrons. This process facilitates the in-situ conversion of boron-10 to lithium-7 while effectively filtering out high-energy neutron components during irradiation. This technique represents a significant advancement in the production of semiconducting materials.
Career Highlights
G S Karumidze is currently associated with Eneco, Inc., where he continues to explore and develop cutting-edge technologies in semiconductor production. His expertise and innovative approaches have positioned him as a key figure in his field.
Collaborations
Karumidze has collaborated with notable colleagues, including Yan R Kucherov and Shota Shalvovich Shavelashvili. These partnerships have contributed to the advancement of his research and the successful development of his patented technologies.
Conclusion
G S Karumidze's work in the field of n-type semiconducting diamonds showcases his innovative spirit and dedication to advancing semiconductor technology. His contributions are likely to have a lasting impact on the industry.