Company Filing History:
Years Active: 2008
Title: Fuw-Iuan Hshieh: Innovator in Junction Barrier Schottky Devices
Introduction
Fuw-Iuan Hshieh is a notable inventor based in Saratoga, CA (US). He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs in Schottky devices. His work has led to advancements that enhance the efficiency and performance of electronic components.
Latest Patents
Hshieh holds a patent for a "Junction barrier Schottky with low forward drop and improved reverse block voltage." This invention discloses a junction barrier Schottky device supported on a substrate that has a first conductivity type. The Schottky device includes a first diffusion region of a first conductivity type for functioning as a forward barrier height reduction region. Additionally, the Schottky device features a second diffusion region of a second conductivity type disposed immediately adjacent to the first diffusion region for functioning as a backward blocking enhancement region to reduce the backward leakage current. Hshieh's patent portfolio includes 1 patent.
Career Highlights
Fuw-Iuan Hshieh is currently associated with Taurus Micropower, Inc., where he continues to innovate and develop cutting-edge technologies. His expertise in semiconductor devices has positioned him as a key player in the industry.
Collaborations
Hshieh collaborates with various professionals in his field, including his coworker Brian D Pratt. Their combined efforts contribute to the advancement of technology in semiconductor applications.
Conclusion
Fuw-Iuan Hshieh's contributions to the field of semiconductor technology, particularly through his innovative junction barrier Schottky device, highlight his role as a significant inventor. His work continues to influence the development of efficient electronic components.