Poughquag, NY, United States of America

Frederick William Buehrer


Average Co-Inventor Count = 6.7

ph-index = 1

Forward Citations = 18(Granted Patents)


Company Filing History:


Years Active: 2005-2010

where 'Filed Patents' based on already Granted Patents

2 patents (USPTO):

Title: **Frederick William Buehrer: An Innovative Mind in Semiconductor Technology**

Introduction

Frederick William Buehrer hails from Poughquag, NY, and is recognized as a notable inventor with two patents to his name. His contributions have significantly impacted the field of semiconductor technology, particularly in enhancing the performance and efficiency of electronic devices. Buehrer's work at International Business Machines Corporation (IBM) showcases his dedication to innovation and his ability to collaborate with other brilliant minds in the industry.

Latest Patents

Buehrer's latest patents focus on crucial advancements in semiconductor fabrication. The first patent, titled **"Reduction of boron diffusivity in pFETs,"** details a method that applies a stressed film across a boundary defined by a semiconductor structure. This process modifies the boron diffusion rate during annealing, enabling control over final boron concentrations. The versatility of this technique allows for the establishment of different boron diffusion rates in lateral and vertical directions, achieving results comparable to arsenic and effectively reducing junction capacitance in both nFETs and pFETs simultaneously.

His second patent, **"Vapor phase etch trim structure with top etch blocking layer,"** presents an innovative solution for fabricating line segments with precise dimensions. This involves creating a blocking layer on a hard mask, which maintains the initial thickness of the hard mask while enabling the formation of a smaller line segment through a series of chemical reactions. This technique not only optimizes the etching process but also negates the need for additional film layers, illustrating Buehrer's commitment to efficiency in semiconductor manufacturing.

Career Highlights

Frederick William Buehrer's career at IBM has been marked by his contributions to cutting-edge semiconductor technology. His research focuses on enhancing device performance through innovative materials and processes. Buehrer's work exemplifies the spirit of invention and the drive to push the boundaries of what is achievable in the tech industry.

Collaborations

Throughout his career, Buehrer has collaborated with esteemed colleagues such as Derek Chen and William M. Chu. These partnerships not only foster innovation but also demonstrate the importance of teamwork in tackling complex challenges within the field of semiconductor research.

Conclusion

Frederick William Buehrer's contributions to patenting significant technologies in semiconductor manufacturing underscore his status as an influential inventor. His inventive solutions, combined with collaborative efforts at IBM, pave the way for advancements in electronic devices, ultimately benefiting the broader field of technology. Through his work, Buehrer continues to exemplify the essence of innovation, reshaping the future of semiconductors.

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