Fred D Fishburn

Title: Innovations of Fred D. Fishburn

Introduction

Fred D. Fishburn is a notable inventor based in Richardson, TX (US), recognized for his contributions to semiconductor technology. He holds 2 patents that showcase his expertise in the field. His work primarily focuses on methods that enhance the efficiency and reliability of integrated circuit devices.

Latest Patents

Fishburn's latest patents include a method for etching semiconductor devices, specifically the "In-situ BARC and Nitride Etch Process." This innovative technique involves etching a BARC layer until a specific set point is reached, followed by in-situ etching of the nitride layer within the same fabrication reaction chamber. Another significant patent is the "Method to Eliminate Gate Filaments on Field Plate Isolated Devices." This method aims to prevent the formation of undesirable polysilicon word line gate filaments in VLSI dynamic random access memories by strategically forming an oxide layer in the field plate openings.

Career Highlights

Fred D. Fishburn is currently employed at Texas Instruments Corporation, where he continues to develop cutting-edge technologies. His work has significantly impacted the semiconductor industry, particularly in improving the fabrication processes of integrated circuits.

Collaborations

Fishburn has collaborated with esteemed colleagues such as Duane E. Carter and William R. McKee, contributing to advancements in semiconductor technology.

Conclusion

Fred D. Fishburn's innovative patents and contributions to Texas Instruments Corporation highlight his significant role in the semiconductor industry. His work continues to influence the development of more efficient and reliable integrated circuit devices.