François Boedt

Title: François Boedt: Innovator in Silicon-On-Insulator Technology

Introduction

François Boedt is a notable inventor based in Meylan, France. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon-on-insulator (SOI) substrates. His innovative approach has led to advancements that enhance the performance and reliability of semiconductor devices.

Latest Patents

François Boedt holds a patent for a process titled "Process for fabricating a substrate of the silicon-on-insulator type with reduced roughness and uniform thickness." This patent describes a method for fabricating an SOI substrate by co-implanting atomic or ionic species into a semiconductor donor substrate. The process creates a weakened zone that separates a thin silicon active layer from the donor substrate. The donor substrate is then bonded to a semiconductor receiver substrate, resulting in a buried silicon layer. The method includes a thermal annealing step that minimizes surface roughness and ensures uniform thickness of both the silicon active layer and the buried oxide layer.

Career Highlights

Throughout his career, François Boedt has worked with prominent companies in the semiconductor industry, including Soitec and S.O.I.tec Silicon on Insulator Technologies. His expertise in SOI technology has positioned him as a key figure in advancing semiconductor fabrication techniques.

Collaborations

François has collaborated with notable professionals in the field, including Eric Neyret and Ludovic Ecarnot. These collaborations have contributed to the development of innovative solutions in semiconductor technology.

Conclusion

François Boedt's contributions to silicon-on-insulator technology have had a lasting impact on the semiconductor industry. His innovative processes and collaborations continue to influence advancements in this critical field.