Franz Koehl

Title: Franz Koehl - Innovator in Semiconductor Technology

Introduction

Franz Koehl is a notable inventor based in Burghausen, Germany. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods for producing high-quality wafers.

Latest Patents

Franz Koehl holds a patent for a "Method for producing a wafer with a monocrystalline silicon carbide layer." This patent describes a process where a large-surface wafer is created by growing a monocrystalline SiC layer epitaxially on a monocrystalline Si layer that is equipped with a nucleation layer. The process involves carbonization, followed by the deposition of a polycrystalline SiC layer. The Si layer is then etched away, resulting in a wafer that combines both monocrystalline and polycrystalline SiC layers, meeting the stringent requirements of semiconductor technology. He has 1 patent to his name.

Career Highlights

Franz Koehl is associated with Cs Halbleiter- und Solartechnologie GmbH, where he applies his expertise in semiconductor manufacturing. His work has been instrumental in advancing the technology used in the production of silicon carbide wafers.

Collaborations

Franz Koehl has collaborated with notable colleagues such as Christoph Scholz and Thomas Weber, contributing to various projects within the semiconductor industry.

Conclusion

Franz Koehl's innovative methods and dedication to semiconductor technology have established him as a key figure in his field. His contributions continue to influence advancements in wafer production and semiconductor applications.