Ehingen, Germany

Frank Stubhan

This inventor holds 2 USPTO granted patents and 1 published patent application and 1 EPO patent. Top assignees: Daimler Chrysler Ag, Sitec Gmbh. Active years: 2003-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Frank Stubhan. Retrieved from https://idiyas.com/inventor/frank-stubhan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 50.0

 

Average Co-Inventor Count = 2.4

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2003-2016

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2 patents (USPTO):Explore Patents

Title: Frank Stubhan: Innovator in Silicon Technology

Introduction

Frank Stubhan is a notable inventor based in Ehingen, Germany. He has made significant contributions to the field of silicon technology, particularly in the development of devices and processes that enhance the efficiency of silicon deposition reactors. With a total of two patents to his name, Stubhan's work reflects a commitment to innovation and advancement in materials science.

Latest Patents

Stubhan's latest patents include a clamping and contacting device for thin silicon rods. This device is designed for mounting and electrically contacting thin silicon rods in silicon deposition reactors. The clamping and contacting device features a rod holder that accommodates one end of a thin silicon rod. It comprises at least three contact elements arranged around a receiving space for the rod. Each contact element has a contact surface that faces the receiving space, ensuring both electrical and mechanical contact with the thin silicon rod. Notably, the contact surfaces of adjacent elements are spaced apart to optimize functionality.

Another significant patent by Stubhan is for a composite structure and the process for producing it. This invention involves a composite structure that includes a substantially monocrystalline growth substrate and at least one layer of diamond or diamond-like material. The growth substrate is treated to provide crystal growth nuclei with specific orientations, allowing for the deposition of diamond layers. This innovative process enhances the quality and performance of the composite structure.

Career Highlights

Throughout his career, Frank

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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