Flora S Ip

Title: Innovations by Flora S Ip in Semiconductor Technology

Introduction

Flora S Ip is a notable inventor based in Singapore, recognized for her contributions to semiconductor technology. With a total of two patents to her name, she has made significant advancements in the field of interconnect surfaces.

Latest Patents

Flora's latest patents focus on the passivation of copper interconnect surfaces with a passivating metal layer. The process involves forming an interconnect line on an intermetal dielectric (IMD) layer within a semiconductor device. An interconnect hole is created in the IMD layer, which has walls and a bottom. A diffusion barrier is established on these walls and the bottom of the hole. The interconnect hole is then filled with a copper metal line. A chemical mechanical polishing (CMP) step is performed to planarize the device and remove excess copper above the IMD layer. Subsequently, a passivating metal layer is deposited on the surface of the copper metal line, encapsulating it at the top of the hole. Alternatively, a blanket deposit of a copper metal line layer can cover the diffusion layer, filling the interconnect hole. Another CMP process is executed to ensure the device is planarized, followed by the deposition of a passivating metal layer in a self-aligned deposition process.

Career Highlights

Flora has worked with prominent organizations such as Chartered Semiconductor Manufacturing Ltd. and the National University of Singapore. Her experience in these institutions has contributed to her expertise in semiconductor technology and innovation.

Collaborations

Flora has collaborated with notable colleagues, including Lap Chan and Kuan Pei Yap, enhancing her work through teamwork and shared knowledge.

Conclusion

Flora S Ip's contributions to semiconductor technology through her innovative patents demonstrate her significant role in advancing the field. Her work continues to influence the development of efficient interconnect surfaces in semiconductor devices.