Sunnyvale, CA, United States of America

Feng Wang

This inventor holds 71 USPTO granted patents and 14 published patent applications and 6 EPO patents, primarily in Storage Systems (CPC class G06F). Top assignees: Pure Storage, Inc., Lam Research Corporation, International Business Machines Corporation. Active years: 2010-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Feng Wang. Retrieved from https://idiyas.com/inventor/feng-wang-qk0xqsm1

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 71 

% Patents Active = 80.3

 

Average Co-Inventor Count = 4.2

ph-index = 17

Forward Citations = 3,032(Granted Patents)

Forward Citations (Not Self Cited) = 2,854(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Santa Clara, CA (US) (2014 - 2022)
  • Redmond, WA (US) (2015 - 2023)
  • Sunnyvale, CA (US) (2010 - 2024)
  • Los Altos, CA (US) (2023 - 2024)

Company Filing History:


Years Active: 2010-2025

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Areas of Expertise:
Deduplication
Electrostatic Chucks
I/O Performance
Storage Devices
Data Management
Predictive Analytics
Memory Efficiency
Resource Sizing
Variable Response Times
Document Annotation
Signature Utilization
Garbage Collection
71 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Feng Wang in Substrate Processing Technologies

Introduction

Feng Wang, based in Sunnyvale, CA, has made significant strides in the field of substrate processing, boasting an impressive portfolio of 66 patents. His work has led to the development of advanced technologies that enhance the efficiency and effectiveness of various processing systems used in semiconductor manufacturing.

Latest Patents

Among his latest innovations, Wang has contributed to the field with pivotal patents including an "Electrostatic Chuck with Ceramic Monolithic Body." This invention features a monolithic ceramic body designed for substrate processing systems. It incorporates several first electrodes strategically positioned adjacent to the top surface, allowing them to selectively receive a chucking signal. Additionally, the design includes a gas channel that supplies back side gas to the top surface, along with coolant channels to manage the temperature of the monolithic body.

Another significant patent is the "Electrostatically Clamped Edge Ring," which describes a method for electrostatically clamping an edge ring within a plasma processing chamber. This process involves the use of an electrostatic ring clamp equipped with a temperature channel that allows for controlled gas flow. A crucial aspect of this innovation is measuring the pressure within the temperature channel to ensure the proper operation of the clamping mechanism, providing insights into sealing integrity and maintaining optimal processing conditions.

Career Highlights

Feng Wang has held key positions in several prominent companies throughout his career. He has worked at Pure Storage, Inc. and International Business Machines Corporation (IBM), where he further honed his expertise in developing cutting-edge technologies and solutions. His extensive experience in these organizations has significantly contributed to his innovative capabilities.

Collaborations

Throughout his career, Wang has collaborated with esteemed colleagues such as John Colgrove and Ethan L. Miller. These collaborations have fostered an environment of innovation, allowing for the exchange of ideas and expertise that have led to the successful development of new technologies.

Conclusion

Feng Wang's contributions to substrate processing technologies have not only advanced the field but have also paved the way for future innovations. With a commitment to excellence and an impressive portfolio of patents, Wang continues to be a driving force in the industry, influencing the direction of semiconductor manufacturing and related technologies. His works serve as a testament to the power of innovation in addressing the challenges of modern technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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