Company Filing History:
Years Active: 2025
Title: FeiPeng Lin: Innovator in Thin-Film Transistor Technology
Introduction
FeiPeng Lin is a notable inventor based in Xiamen, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of thin-film transistors. His innovative work has led to advancements that enhance the performance and efficiency of electronic devices.
Latest Patents
FeiPeng Lin holds a patent for a thin-film transistor substrate with an impurity concentration profile in the layering direction that has a peak outside the semiconductor layer. This patent describes a thin-film transistor substrate that includes an insulating substrate, a conductor layer with a top-gate electrode part of an oxide semiconductor thin-film transistor, and an oxide semiconductor layer located below the top-gate electrode part. The design features low-resistive regions that are lower in resistance than the channel region, which are strategically placed to improve the overall performance of the transistor.
Career Highlights
FeiPeng Lin is currently employed at Wuhan Tianma Micro-electronics Co., Ltd. His work at this company has allowed him to focus on cutting-edge research and development in microelectronics. His expertise in thin-film transistors has positioned him as a key player in the industry.
Collaborations
FeiPeng Lin collaborates with Kenji Sera, a fellow innovator in the field. Their partnership has fostered a productive exchange of ideas and has contributed to advancements in semiconductor technology.
Conclusion
FeiPeng Lin's contributions to thin-film transistor technology exemplify the innovative spirit of modern inventors. His work continues to influence the development of more efficient electronic devices, showcasing the importance of research and collaboration in the field of microelectronics.