Suzhou, China

FangFang Yang


Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2010-2015

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2 patents (USPTO):Explore Patents

Title: Innovations by FangFang Yang in Semiconductor Technology

Introduction

FangFang Yang is a notable inventor based in Suzhou, China. He has made significant contributions to the field of semiconductor technology, particularly in die attach methods. With a total of 2 patents, his work has enhanced the durability and performance of semiconductor devices.

Latest Patents

FangFang Yang's latest patents focus on high bond line thickness for semiconductor devices. The die attach methods he developed involve providing a leadframe with a die attach pad. He utilizes boundary features containing bond wires to define a perimeter on the die attach pad. A conductive material, such as solder, is deposited within this perimeter. Subsequently, a die containing an integrated circuit device is attached to the die attach pad using the conductive material. The innovative boundary features allow for an increased thickness of conductive material, resulting in enhanced bond line thickness. This advancement significantly improves the durability and performance of the resulting semiconductor package.

Career Highlights

FangFang Yang is currently employed at Fairchild Semiconductor Corporation, where he continues to innovate in semiconductor technology. His work has been instrumental in developing methods that improve the reliability of semiconductor devices.

Collaborations

FangFang has collaborated with several talented individuals in his field, including Zhengyu Zhu and Yi Li. Their combined expertise has contributed to the success of various projects within the semiconductor industry.

Conclusion

FangFang Yang's contributions to semiconductor technology through his innovative patents and collaborative efforts have made a significant impact on the industry. His work continues to pave the way for advancements in semiconductor device performance and durability.

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