Fang-shi J Lai

Title: The Innovative Contributions of Fang-shi J Lai

Introduction

Fang-shi J Lai is a notable inventor based in Peekskill, NY (US). She has made significant contributions to the field of semiconductor technology. Her innovative work has led to the development of a unique etching process that enhances the fabrication of semiconductor devices.

Latest Patents

Fang-shi J Lai holds a patent for a "Deep trench etching process using CCl.sub.2 F.sub.2 /Ar and CCl.sub.2." This invention relates to a process for forming deep trenches in semiconductor substrates through Reactive Ion Etching (RIE). It specifically addresses the challenge of preventing lateral etching or 'blooming' in heavily doped semiconductor regions. The process involves reactively ion etching the upper region in an atmosphere of CCl.sub.2 F.sub.2 and argon, followed by etching the remaining thickness in an atmosphere of CCl.sub.2 F.sub.2 and oxygen. This method results in trenches with uniform sidewalls, which is crucial for the performance of semiconductor devices. Fang-shi J Lai has 1 patent to her name.

Career Highlights

Fang-shi J Lai is currently employed at International Business Machines Corporation (IBM), where she continues to push the boundaries of semiconductor technology. Her work has been instrumental in advancing the efficiency and effectiveness of semiconductor manufacturing processes.

Collaborations

Fang-shi J Lai has collaborated with Ronald N Schulz, contributing to the innovative projects at IBM. Their teamwork exemplifies the importance of collaboration in driving technological advancements.

Conclusion

Fang-shi J Lai's contributions to semiconductor technology through her innovative etching process highlight her role as a leading inventor in the field. Her work not only enhances manufacturing techniques but also paves the way for future advancements in semiconductor devices.