Fang-Ju Lin

Title: The Innovative Contributions of Fang-Ju Lin

Introduction

Fang-Ju Lin is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, particularly in the area of etching processes. His work has led to advancements that enhance the efficiency and effectiveness of high-aspect-ratio openings in photoresist materials.

Latest Patents

Fang-Ju Lin holds a patent titled "Ultra-high oxide to photoresist selective etch of high-aspect-ratio openings in a low-pressure, high-density plasma." This innovative etch provides a high oxide to photoresist selectivity in a low-pressure, high-density plasma environment. The patent describes a method that achieves an extremely high reverse RIE lag, allowing for the etching of small high-aspect ratio openings while preventing the etching of larger openings. The process involves generating a high-density plasma that ionizes carbon monoxide (CO) and produces excited CO neutrals, which play a crucial role in the etching process.

Career Highlights

Fang-Ju Lin is currently employed at Lam Research Corporation, a leading company in the semiconductor equipment industry. His work at Lam Research has been instrumental in developing advanced etching techniques that are essential for modern semiconductor fabrication.

Collaborations

Fang-Ju Lin has collaborated with several talented individuals in his field, including Chok Ho and Chuan-Kai Lo. These collaborations have contributed to the successful development of innovative technologies and processes in semiconductor manufacturing.

Conclusion

Fang-Ju Lin's contributions to the field of semiconductor technology, particularly through his patent on selective etching processes, highlight his role as an influential inventor. His work continues to impact the industry positively, paving the way for future innovations.