Dresden, Germany

Falong Zhou

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Falong Zhou - Innovator in Transistor Technology

Introduction

Falong Zhou is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for forming transistors. His innovative approach has led to advancements that enhance the performance and efficiency of electronic devices.

Latest Patents

Falong Zhou holds a patent for a "Method of forming transistor with increased gate width." This patent describes methods for creating transistor devices that feature an increased gate width dimension. The process involves forming an isolation structure in a semiconducting substrate, which defines an active region. An ion implantation process is performed on the isolation structure to create a damaged region, followed by an etching process to define a recess in the isolation structure. This method ultimately allows for improved transistor performance.

Career Highlights

Falong Zhou is currently employed at Globalfoundries Inc., a leading company in semiconductor manufacturing. His work focuses on enhancing transistor technology, which is crucial for the advancement of modern electronics. With a patent portfolio that includes 1 patent, Zhou continues to push the boundaries of innovation in his field.

Collaborations

Falong Zhou has collaborated with talented professionals such as Chung Foong Tan and Maciej Wiatr. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

Falong Zhou's contributions to transistor technology exemplify the spirit of innovation in the semiconductor industry. His work not only advances the field but also paves the way for future developments in electronic devices.

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