Ernest R Helfrich

Title: The Innovations of Ernest R. Helfrich

Introduction

Ernest R. Helfrich is a notable inventor based in Richardson, Texas. He is recognized for his contributions to the field of integrated circuit technology. His innovative work has led to the development of a significant patent that enhances the performance of N-channel MOS structures.

Latest Patents

Helfrich holds a patent for a "Stable N-channel MOS structure." This invention features an N-channel MOS integrated circuit device that incorporates a composite metal gate structure. The design improves temperature stability, which is crucial for the reliability of integrated circuits. The gate structure utilizes a polysilicon layer to separate the conventional metal gate from the underlying gate oxide. This innovative approach allows the metal gate and polysilicon layer to extend laterally to the gate region's extent. The composite metal gate structure is particularly beneficial for applications in read-only memory (ROM). Notably, the polysilicon layer is formed without requiring additional photolithographic steps, streamlining the manufacturing process.

Career Highlights

Helfrich's career is marked by his work at Mos Technology, Inc., where he has made significant contributions to the development of advanced semiconductor technologies. His expertise in integrated circuits has positioned him as a valuable asset in the field.

Collaborations

Throughout his career, Helfrich has collaborated with notable colleagues, including John O. Paivinen and Walter D. Eisenhower, Jr. These partnerships have fostered innovation and contributed to the advancement of technology in the semiconductor industry.

Conclusion

Ernest R. Helfrich's contributions to the field of integrated circuits, particularly through his patent for a stable N-channel MOS structure, highlight his innovative spirit and technical expertise. His work continues to influence the development of reliable semiconductor technologies.