Title: Eric David Bauswell: Innovator in Doped Diamond Semiconductor Technology
Introduction
Eric David Bauswell is an inventor based in Eldridge, IA (US). He is associated with Ludela Technologies LLC, where he works on innovative technologies. Although he currently holds no granted patents, his work in the field of semiconductor technology is noteworthy.
Latest Patent Applications
Bauswell's latest patent applications include "Doped Diamond SemiConductor and Method of Manufacture Using Laser Ablation." This application discloses a doped diamond semiconductor and a method of production using a laser. The process involves adding a dopant and/or a diamond or sapphire seed material to a graphite-based ablative layer. This layer is positioned below a confinement layer, which also consists of graphite and is situated above a backing layer. The aim is to promote the formation of diamond particles with desirable semiconductor properties through the action of a laser beam on the ablative layer. The incorporation of dopants is intended to activate the reaction necessary for producing materials useful in the creation of doped semiconductors or conductors. These materials are suitable for modulating the electrical, thermal, or quantum properties of the produced material. The diamond particles formed may be arranged as semiconductors, electrical components, thermal components, quantum components, and/or integrated circuits.
Conclusion
Eric David Bauswell is making strides in the field of semiconductor technology, particularly with his innovative approaches to doped diamond semiconductors. His contributions, although not yet reflected in granted patents, showcase his potential impact on the industry.