Eric Criton

Title: The Innovations of Eric Criton

Introduction

Eric Criton is a notable inventor based in Paris, France. He has made significant contributions to the field of materials science, particularly in the production of silicon layers. His innovative approach has led to the development of a unique process that enhances the quality and efficiency of silicon deposition.

Latest Patents

Eric Criton holds a patent for a process titled "Process for producing a layer containing silicon." This process involves introducing another element from column IVa of the periodic table during silicon deposition. The proportion of this element is maintained at or below 5% of the number of silicon atoms, while being greater than 0.1%. A preferred variant of this process utilizes germanium as the additional element. The deposition occurs at a temperature close to the crystallization temperature, T. Furthermore, the process may include a subsequent phase where the deposited layer undergoes heat treatment in a hydrogen plasma atmosphere at a temperature below T.

Career Highlights

Eric Criton has built a successful career at Thomson-CSF, where he has been able to apply his innovative ideas in practical settings. His work has not only advanced the field of silicon production but has also contributed to the broader landscape of semiconductor technology.

Collaborations

Throughout his career, Eric has collaborated with esteemed colleagues such as Daniel Kaplan and Pierre Landouar. These partnerships have fostered a creative environment that has led to further advancements in their respective fields.

Conclusion

Eric Criton exemplifies the spirit of innovation through his groundbreaking work in silicon layer production. His contributions continue to influence the materials science industry, showcasing the importance of collaboration and creativity in technological advancements.