This inventor holds 4 USPTO granted patents and 3 published patent applications. Top assignees: Eiji Yoshida, Other. Active years: 2006-2007.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
1 out of 1 
3 out of 834,513 Years Active: 2006-2007
Title: Eri Kawaguchi - Innovator in AlN Single Crystal Substrates
Introduction
Eri Kawaguchi is a notable inventor based in Nagoya-shi, Japan. She has made significant contributions to the field of materials science, particularly in the development of AlN single crystal substrates. Her innovative approach focuses on enhancing the properties of these substrates for various applications.
Latest Patent Applications
Eri Kawaguchi's latest patent application is titled "AlN SINGLE CRYSTAL SUBSTRATE AND DEVICE." This application describes an AlN single crystal substrate that contains carbon and boron as impurities. The application specifies that the ratio of boron concentration to carbon concentration is maintained between 0.22 and 6.85, expressed in terms of the number of atoms per 1 cm. By adjusting the concentration of these impurities, the substrate can achieve high transmittance in the ultraviolet region, which is crucial for various technological applications.
Conclusion
Eri Kawaguchi's work in the field of AlN single crystal substrates showcases her innovative spirit and dedication to advancing materials science. Her contributions, particularly through her latest patent application, highlight the potential for improved technologies in the future.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile