Palo Alto, CA, United States of America

Eran Newman

USPTO Granted Patents = 2 

Average Co-Inventor Count = 2.4

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 2016-2017

Loading Chart...
2 patents (USPTO):

Title: Eran Newman: Innovator in Atomic Layer Deposition Technologies

Introduction

Eran Newman is a notable inventor based in Palo Alto, CA, who has made significant contributions to the field of atomic layer deposition. With a total of 2 patents to his name, Newman has developed innovative methods that enhance the efficiency and effectiveness of film deposition processes.

Latest Patents

Newman's latest patents include groundbreaking technologies. One patent focuses on atomic layer deposition of films using a spatially separated injector chamber. This method involves positioning multiple substrates on a substrate support within a processing chamber that contains several processing regions, each separated by a gas curtain. The process alternates exposure to first reactive gases, purge gases, second reactive gases, and additional purge gas in at least one of the processing regions to effectively deposit a film. Another patent relates to methods for adjusting transistor flat band voltage and the formation of transistor gates. This method includes cleaning a substrate, annealing it in a nitrogen-rich environment to create silicon-nitrogen bonds, hydroxylating the substrate surface, and depositing a hafnium oxide layer over the substrate.

Career Highlights

Eran Newman is currently employed at Applied Materials, Inc., a leading company in the semiconductor industry. His work focuses on advancing technologies that are crucial for the development of modern electronic devices. Newman's innovative approaches have positioned him as a key player in the field of materials science.

Collaborations

Throughout his career, Newman has collaborated with talented individuals such as Tatsuya E Sato and Steven C H Hung. These collaborations have fostered an environment of innovation and have contributed to the successful development of his patented technologies.

Conclusion

Eran Newman is a distinguished inventor whose work in atomic layer deposition has paved the way for advancements in semiconductor technology. His contributions continue to influence the industry and inspire future innovations.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…