Company Filing History:
Years Active: 1996-1999
Title: Emil Baran: Innovator in Silicon-on-Insulator Technology
Introduction
Emil Baran is a notable inventor based in Brewster, NY (US), recognized for his contributions to the field of silicon-on-insulator technology. With a total of two patents to his name, Baran has made significant advancements in manufacturing processes that enhance the quality and efficiency of silicon-on-insulator wafers.
Latest Patents
Baran's latest patents include a single-etch stop process for the manufacture of silicon-on-insulator wafers. This innovative process involves forming silicon-on-insulator bonded wafers that consist of a substrate layer, an oxide layer, a device layer, and a device wafer. The device layer is strategically positioned between the device wafer and the oxide layer, while the oxide layer is situated between the device layer and the substrate layer. The device wafer is characterized by a p.sup.+ or n.sup.+ conductivity type and a resistivity ranging from about 0.005 ohm-cm to about 0.1 ohm-cm. A portion of the device wafer is removed, resulting in a defect-free surface, which is then etched to expose the device layer.
Another patent by Baran focuses on a single-etch stop process for the manufacture of silicon-on-insulator substrates. This process includes the formation of a silicon-on-insulator bonded substrate comprising a handle wafer, a device wafer, a device layer with a thickness between about 0.5 and 50 micrometers, and an oxide layer. The device wafer has a boron concentration of at least about 1.times.10.sup.18 boron atoms/cm.sup.3 and a resistivity of about 0.01 to about 0.02 ohm-cm. After mechanically removing a portion of the device wafer, the remaining surface exhibits a total thickness variation of less than about 2 micrometers and is defect-free. The exposed device layer is then polished to create a silicon-on-insulator substrate with a total thickness variation not exceeding 10% of the maximum thickness of the device layer.
Career Highlights
Emil Baran is currently associated with Si Bond LLC, where he continues to innovate and develop advanced manufacturing techniques. His work has significantly impacted the semiconductor industry, particularly in the production of high-quality silicon-on-insulator materials.
Collaborations
Baran has collaborated with esteemed colleagues