Elizabeth Morales

Title: Elizabeth Morales - Innovator in Deep Trench Silicon Etching

Introduction

Elizabeth Morales is a prominent inventor based in Poughkeepsie, NY (US). She has made significant contributions to the field of semiconductor technology, particularly in the area of deep trench silicon etching. Her innovative methods have the potential to enhance the performance of dynamic random-access memory (DRAM) devices.

Latest Patents

Elizabeth Morales holds a patent for a method of reducing reactive ion etching (RIE) lag for deep trench silicon etching. This method minimizes RIE lag during the construction of trench openings in DRAMs with large aspect ratios. The patent describes a technique for forming a passivation film that prevents isotropic etching of the substrate, thereby maintaining the required profile and shape of the deep trench. The RIE process allows for a partial deep trench to be etched into the substrate, achieving a predetermined depth while controlling the thickness of the passivation film.

Career Highlights

Elizabeth is currently employed at International Business Machines Corporation (IBM), where she continues to innovate in semiconductor technologies. Her work has been instrumental in advancing the capabilities of high aspect ratio structures in the semiconductor industry.

Collaborations

Throughout her career, Elizabeth has collaborated with notable colleagues, including Munir D Naeem and Gangadhara Swami Mathad. These collaborations have contributed to her success and the development of her patented technologies.

Conclusion

Elizabeth Morales is a trailblazer in the field of semiconductor technology, with her innovative methods for deep trench silicon etching paving the way for advancements in DRAM performance. Her contributions are invaluable to the industry and highlight the importance of innovation in technology.