Company Filing History:
Years Active: 1999
Title: The Innovative Contributions of Elizabeth Ann Halgas
Introduction
Elizabeth Ann Halgas is a notable inventor based in Monroeville, PA (US). She has made significant contributions to the field of semiconductor technology, particularly in the preparation of silicon carbide wafers. Her innovative methods have implications for the efficiency and effectiveness of semiconductor manufacturing processes.
Latest Patents
Halgas holds a patent for a method of preparing silicon carbide wafers for epitaxial growth. This patent outlines a process where a silicon carbide wafer derived from a boule is lapped by placing it in a recess of a metal-backed template and moving it against a rotating plate. The process utilizes two different diamond slurry mixtures of progressively smaller grit sizes, along with a lubricant, to achieve optimal results. Following the lapping operation, a polishing operation is conducted using two different diamond slurry mixtures and three different apertured pads of progressively softer composition. The wafers are cleaned, and templates are changed after each new diamond slurry mixture used, ensuring high-quality outcomes.
Career Highlights
Halgas is currently employed at Northrop Grumman Systems Corporation, where she continues to apply her expertise in semiconductor technology. Her work has been instrumental in advancing the capabilities of the company in this competitive field.
Collaborations
Some of her notable coworkers include Godfrey Augustine and Donovan L Barrett. Their collaborative efforts contribute to the innovative environment at Northrop Grumman Systems Corporation.
Conclusion
Elizabeth Ann Halgas exemplifies the spirit of innovation in the semiconductor industry through her patented methods and contributions at Northrop Grumman Systems Corporation. Her work continues to influence the field and pave the way for future advancements.