Waanrode, Belgium

Elie Schapmans

USPTO Granted Patents = 1 

 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Elie Schapmans: Innovator in Extreme Ultraviolet Lithography

Introduction

Elie Schapmans is a notable inventor based in Waanrode, Belgium. He has made significant contributions to the field of extreme ultraviolet lithography, a critical technology in the semiconductor manufacturing process. His innovative approach has led to the development of a unique method that enhances the efficiency and effectiveness of lithography pellicles.

Latest Patents

Elie Schapmans holds 1 patent for his invention titled "Method for forming an extreme ultraviolet lithography pellicle." This patent outlines a method that involves coating a carbon nanotube (CNT) membrane and mounting it to a pellicle frame. The process includes pre-coating the CNTs with a seed material and forming an outer coating through atomic layer deposition, which covers the pre-coated CNTs. This innovative method aims to improve the performance of EUVL pellicles in advanced lithography applications.

Career Highlights

Elie Schapmans is currently associated with Imec Vzw, a leading research and innovation hub in nanoelectronics and digital technologies. His work at Imec has positioned him at the forefront of research in lithography technologies, contributing to advancements that are essential for the future of semiconductor manufacturing.

Collaborations

Elie collaborates with talented professionals in his field, including Marina Yurievna Timmermans and Cedric Huyghebaert. These collaborations enhance the research environment and foster innovation within the team.

Conclusion

Elie Schapmans is a distinguished inventor whose work in extreme ultraviolet lithography is paving the way for advancements in semiconductor technology. His innovative methods and collaborations are vital to the ongoing evolution of this critical field.

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