Eizo Miyauchi

Title: Eizo Miyauchi: Innovator in Semiconductor Technology

Introduction

Eizo Miyauchi is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of heterojunction bipolar transistors. His innovative methods have paved the way for advancements in electronic devices.

Latest Patents

Eizo Miyauchi holds a patent for a method of fabricating a heterojunction bipolar transistor. This method involves creating a semiconductor device with an epitaxial layer of a group III-V semiconductor material on an underlying crystal layer. The semiconductor material is doped to the p-type by the addition of beryllium, and it includes materials such as gallium aluminum arsenide and indium gallium aluminum arsenide. The process includes steps of growing the epitaxial layer, adding beryllium at a concentration of about 5×10¹⁹ to 5×10²⁰ atoms/cm³, and incorporating indium in amounts ranging from about 0.5 mole percent to 8 mole percent with respect to the group III elements.

Career Highlights

Eizo Miyauchi is associated with Fujitsu Corporation, where he has contributed to various projects in semiconductor technology. His work has been instrumental in enhancing the performance and efficiency of electronic components.

Collaborations

Eizo has collaborated with notable colleagues, including Hideaki Ishikawa and Toshio Fujii. Their combined expertise has fostered innovation and development in their respective fields.

Conclusion

Eizo Miyauchi's contributions to semiconductor technology exemplify the impact of innovative thinking in the electronics industry. His patent and collaborative efforts continue to influence advancements in this critical area of technology.