Edmond K C Chow

Title: The Innovative Contributions of Edmond K C Chow

Introduction

Edmond K C Chow is a prominent inventor based in Urbana, IL (US). He is known for his significant contributions to the field of semiconductor technology. His work focuses on the development of methods that enhance the capabilities of porous materials in nanoscale applications.

Latest Patents

Chow holds a patent for a method of forming nanoscale three-dimensional patterns in a porous material. This innovative method involves providing a film made of semiconductor material and defining a nanoscale metal pattern on the film. The metal pattern features at least one lateral dimension of about 100 nm or less. The process includes removing semiconductor material from beneath the nanoscale metal pattern to create trenches with a depth-to-width aspect ratio of at least about 10:1. This technique results in the formation of pores in the remaining portions of the film adjacent to the trenches, ultimately creating a three-dimensional pattern with nanoscale dimensions in a porous semiconductor, such as porous silicon. This method can also be extended to form self-integrated porous low-k dielectric insulators with copper interconnects, facilitating wafer-level chip scale packaging integration.

Career Highlights

Chow is affiliated with the University of Illinois, where he continues to advance research in semiconductor technologies. His work has garnered attention for its potential applications in various high-tech industries.

Collaborations

Chow has collaborated with notable colleagues, including Xiuling Li and David N Ruzic, contributing to the advancement of semiconductor research and innovation.

Conclusion

Edmond K C Chow's innovative methods in semiconductor technology exemplify the importance of research and development in the field. His contributions continue to influence advancements in nanoscale applications and materials science.