Edgar J Martinez

Title: Edgar J Martinez: Innovator in Complementary Heterostructure FET Technology

Introduction

Edgar J Martinez is a notable inventor based in Charlottesville, VA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of complementary field effect transistors (FETs). His innovative work has implications for the advancement of electronic devices.

Latest Patents

Martinez holds a patent for "Making staggered complementary heterostructure FET." This invention addresses the need for implementing complementary FETs in group III/group V compound semiconductors, especially on InP substrates. His research demonstrates outstanding n-channel performance in InGaAs channel devices on InP substrates. Preliminary experiments suggest that GaAsSb channel devices will yield optimal p-heterostructure FETs (HFETs). The patent outlines a technique to fabricate both n- and p-channel devices on the same substrate, facilitating the demonstration of complementary HFET (C-HFET) technology. The HFET structure includes a channel region and a barrier region, with the channel region comprising both p-channel and n-channel areas.

Career Highlights

Martinez is associated with the USA as represented by the Secretary of the Navy. His work has been pivotal in advancing semiconductor technology, particularly in the fabrication of complementary FETs. His innovative approaches have garnered attention in the field and contributed to the development of more efficient electronic components.

Collaborations

Some of his notable coworkers include Fritz L Schuermeyer and Paul E Cook. Their collaborative efforts have further enhanced the research and development of semiconductor technologies.

Conclusion

Edgar J Martinez is a distinguished inventor whose work in complementary heterostructure FET technology has made a significant impact in the field of semiconductors. His contributions continue to influence advancements in electronic devices and semiconductor applications.