Stanmore, United Kingdom

Ean Grant Bremner


Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 41(Granted Patents)


Location History:

  • Stanmore, EN (1977)
  • Stanmore, GB (1979)

Company Filing History:


Years Active: 1977-1979

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2 patents (USPTO):Explore Patents

Title: Ean Grant Bremner: Innovator in Semiconductor Measurement Techniques

Introduction

Ean Grant Bremner is a notable inventor based in Stanmore, GB. He has made significant contributions to the field of semiconductor measurement, holding 2 patents that showcase his innovative techniques.

Latest Patents

Bremner's latest patents include a method for determining semiconductor characteristics through an electrochemical measuring technique. This technique employs a concentrated electrolyte as the barrier material, which facilitates the controlled dissolution of a semiconductor surface to provide a continuous depth profile. The depth profile characteristic can be determined by capacitance-voltage measurements on n-type bulk GaAs, utilizing KOH as the electrolyte. Another patent focuses on similar measuring arrangements, emphasizing the importance of the electrolyte in achieving accurate depth profiling.

Career Highlights

Ean Grant Bremner is currently employed at The Post Office, where he applies his expertise in semiconductor technology. His work has contributed to advancements in the measurement and characterization of semiconductor materials.

Collaborations

Bremner has collaborated with notable colleagues, including Marc M Faktor and Thomas Ambridge, enhancing the innovative efforts within his field.

Conclusion

Ean Grant Bremner's contributions to semiconductor measurement techniques reflect his dedication to innovation and research. His patents demonstrate a commitment to advancing technology in this critical area.

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