Hangzhou, China

Duanyang Chen

USPTO Granted Patents = 6 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2024

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6 patents (USPTO):Explore Patents

Title: Innovations of Duanyang Chen in Gallium Oxide Technology

Introduction

Duanyang Chen is a prominent inventor based in Hangzhou, China, known for his significant contributions to the field of gallium oxide technology. With a total of six patents to his name, Chen has been at the forefront of developing advanced methods for preparing conductive and high-resistance gallium oxide materials. His work is pivotal in enhancing the performance of electronic devices.

Latest Patents

Chen's latest patents include a preparation method of conductive gallium oxide based on deep learning and the vertical Bridgman growth method. This innovative method involves obtaining preparation data for conductive gallium oxide single crystals, which includes seed crystal data, environmental data, control data, and raw material data. The process utilizes a trained neural network model to predict the properties of the conductive gallium oxide single crystal, including carrier concentration.

Another notable patent is the quality prediction method, preparation method, and system of high-resistance gallium oxide based on deep learning and the Czochralski method. This method also involves obtaining preparation data, which includes seed crystal data, environmental data, and control data. The environmental data encompasses doping element concentration and type. The preprocessed data is then input into a trained neural network model to predict the quality of the high-resistance gallium oxide single crystal, including its resistivity.

Career Highlights

Duanyang Chen is currently employed at Hangzhou Fujia Gallium Technology Co. Ltd., where he continues to innovate in the field of gallium oxide technology. His work has not only advanced the understanding of gallium oxide materials but has also contributed to the development of new applications in electronics.

Collaborations

Chen collaborates with notable colleagues such as Hongji Qi and Qinglin Sai, who contribute to his research and development efforts in gallium oxide technology.

Conclusion

Duanyang Chen's innovative work in gallium oxide technology showcases his expertise and commitment to advancing materials science. His patents reflect a deep understanding of the complexities involved in preparing and predicting the properties of gallium oxide, making significant strides in the field.

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