Domon Pitzer

Title: Domon Pitzer: Innovator in Trench-Gated MIS Devices

Introduction

Domon Pitzer is a notable inventor based in San Jose, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the design and fabrication of trench-gated Metal-Insulator-Semiconductor (MIS) devices. His innovative approach addresses critical challenges in device manufacturing.

Latest Patents

Domon Pitzer holds a patent for "Structures of and methods of fabricating trench-gated MIS devices." This patent describes a unique method where contact is made to the gate within the trench, eliminating the need for the gate material, typically polysilicon, to extend outside of the trench. This design effectively avoids stress issues at the upper corners of the trench. The patent outlines various configurations for making contact between the gate metal and the polysilicon, including embodiments that widen the trench in the contact area. By etching back the polysilicon below the top surface of the silicon throughout the device, the need for a polysilicon mask is often eliminated, resulting in reduced fabrication costs.

Career Highlights

Domon Pitzer is currently employed at Vishay Siliconix, where he continues to advance his work in semiconductor technologies. His innovative designs have contributed to the efficiency and reliability of MIS devices, making a lasting impact in the industry.

Collaborations

Throughout his career, Domon has collaborated with talented professionals such as Anup Bhalla and Jacek Korec. These collaborations have fostered an environment of innovation and creativity, leading to advancements in their respective fields.

Conclusion

Domon Pitzer's contributions to trench-gated MIS devices exemplify his commitment to innovation in semiconductor technology. His patent and work at Vishay Siliconix highlight his role as a key figure in advancing the industry.