Chengdu, China

Dingxiang Ma

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: University of Electronic Science and Technology of China. Active years: 2022-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dingxiang Ma. Retrieved from https://idiyas.com/inventor/dingxiang-ma

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 50.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2022-2026

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2 patents (USPTO):Explore Patents

Title: **Dingxiang Ma: Innovating Power Semiconductor Devices**

Introduction

Dingxiang Ma, an accomplished inventor based in Chengdu, China, has made significant contributions to the field of semiconductor technology. With a focus on enhancing the performance of power semiconductor devices, his innovations aim to address key challenges in the industry.

Latest Patents

One of his notable patents is for a power semiconductor device that improves hot carrier injection. This invention introduces a drain field plate at one side of a drain within a dielectric trench, which is linked to a drain electrode. By maintaining identical electric potential, this design enhances hole injection effects at the drain side. Additionally, a shield gate field plate positioned near the source electrode improves electron injection while reducing parasitic capacitance. The use of a trench etching method further ensures effective carrier movement, avoiding side wall interference in the dielectric trench.

Career Highlights

Dingxiang Ma is affiliated with the University of Electronic Science and Technology of China, where he contributes to research and development in semiconductor technologies. His innovative spirit is evident through his focused efforts in advancing the performance and efficiency of power semiconductor devices.

Collaborations

In his pursuit of innovation, Ma collaborates with esteemed colleagues, including Ming Qiao and Zhengkang Wang. Their collective expertise in the field enhances their ability to tackle complex challenges and drive progress in semiconductor research.

Conclusion

Dingxiang Ma's dedication to improving power semiconductor devices underscores the importance of innovation in technology. His patent reflects a significant advancement in the field, promising to enhance device performance and efficiency for future applications. As he continues his work at the University of Electronic Science and Technology of China, Dingxiang Ma remains a key figure in semiconductor research and development.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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