Dresden, Germany

Dietmar Ottenwälder


Average Co-Inventor Count = 4.7

ph-index = 2

Forward Citations = 12(Granted Patents)


Company Filing History:


Years Active: 2003

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3 patents (USPTO):Explore Patents

Title: Dietmar Ottenwälder: Innovator in Gas Phase Doping Technologies

Introduction

Dietmar Ottenwälder is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, particularly in gas phase doping methods. With a total of 3 patents to his name, Ottenwälder continues to push the boundaries of innovation in his industry.

Latest Patents

Ottenwälder's latest patents include a method for improving a doping profile for gas phase doping. This method introduces silicon nitride and/or products of decomposition from a silicon nitride deposition into a process chamber before or during the actual gas phase doping. This innovative approach allows for a significantly improved doping profile. Another notable patent is a method for manufacturing a trench capacitor. This method utilizes low-pressure gas phase doping to form a buried plate as a capacitor plate, which reduces process costs and enhances capacitor properties.

Career Highlights

Ottenwälder is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. His work has been instrumental in advancing the technologies that underpin modern electronic devices. His expertise in gas phase doping has positioned him as a key figure in the semiconductor industry.

Collaborations

Some of his coworkers include Moritz Haupt and Alexandra Lamprecht, who contribute to the innovative environment at Infineon Technologies AG.

Conclusion

Dietmar Ottenwälder's contributions to gas phase doping technologies exemplify his commitment to innovation in the semiconductor field. His patents reflect a deep understanding of the complexities involved in semiconductor manufacturing. Ottenwälder's work continues to influence the industry and pave the way for future advancements.

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