Dianne G Pinello

Title: Innovations by Dianne G Pinello in Integrated Circuit Technology

Introduction

Dianne G Pinello is a notable inventor based in Woodland Park, Colorado. She has made significant contributions to the field of integrated circuit technology, particularly in the fabrication of differential gate oxide thicknesses. Her innovative work has led to advancements that enhance device characteristics in integrated circuits.

Latest Patents

Dianne holds a patent for the "Fabrication of differential gate oxide thicknesses on a single integrated circuit chip." This patent describes techniques for fabricating integrated circuits that utilize devices with gate oxides of varying thicknesses and a high nitrogen content. The process involves forming gate oxides at pressures of at least 2.0 atmospheres in a nitrogen-containing gas environment. The method allows for the creation of devices with different gate oxide thicknesses on the same integrated circuit, improving performance for both high and low voltage applications.

Career Highlights

Dianne is associated with LSI Logic Corporation, where she has applied her expertise in integrated circuit design and fabrication. Her work has been instrumental in developing technologies that optimize the performance of electronic devices.

Collaborations

Throughout her career, Dianne has collaborated with notable colleagues, including David W Daniel and Michael F Chisholm. These partnerships have contributed to her success and the advancement of technology in her field.

Conclusion

Dianne G Pinello's innovative contributions to integrated circuit technology demonstrate her expertise and commitment to advancing the field. Her patent on differential gate oxide thicknesses showcases her ability to solve complex engineering challenges, making her a valuable figure in the world of technology.