Company Filing History:
Years Active: 1999
Title: The Innovations of Diane M Hoffstetter: A Pioneer in Flash EEPROM Technology
Introduction
Diane M Hoffstetter, based in Sunnyvale, California, is a distinguished inventor recognized for her contributions to non-volatile memory technology. With a patent to her name, she has significantly advanced the field of electronically erasable programmable read-only memory (EEPROM). Her innovative approaches have paved the way for more efficient data storage solutions.
Latest Patents
Hoffstetter's notable patent is for a "Two transistor flash EEPROM cell and method of operating same." This patent details a flash EEPROM cell fabricated within a semiconductor substrate, comprising a first well region and a second well region of opposite conductivity types. A unique feature of her invention is the integration of a non-volatile memory transistor and an independently controllable access transistor, allowing for efficient data programming and erasure. The operation of this EEPROM cell is characterized by the transfer of electrons through Fowler-Nordheim tunneling, enabling it to function effectively in a 3.3 Volt system with biasing voltages not exceeding 12 Volts.
Career Highlights
Diane Hoffstetter's career is anchored in her association with Xilinx, Inc., where she continues to contribute her innovative insights into semiconductor technology. Her work at Xilinx has placed her at the forefront of advancements in programmable logic devices and memory solutions.
Collaborations
Throughout her career, Hoffstetter has collaborated with notable colleagues such as Anders T Dejenfelt and Qi Lin. These partnerships have enriched her research and development endeavors, fostering innovation and promoting technological advancement within their fields.
Conclusion
Diane M Hoffstetter's inventive spirit and technical expertise have made a significant impact on the realm of flash memory technology. Her patented work not only showcases her inventive capabilities but also her commitment to enhancing the efficiency of electronic components. As technology continues to evolve, Hoffstetter's contributions will remain influential, inspiring future innovations in memory storage and beyond.