Di-Son Kuo

Title: Di-Son Kuo: Innovator in EEPROM Technology

Introduction

Di-Son Kuo is a notable inventor based in New York, NY (US), recognized for his contributions to the field of electrically erasable and programmable read-only memory (EEPROM) technology. With a total of 2 patents, Kuo has made significant advancements that enhance the efficiency and durability of EEPROM cells.

Latest Patents

Kuo's latest patents include innovative designs for EEPROM technology. The first patent describes an electrically erasable and programmable read-only memory that features an insulated control gate and an insulating floating gate within a trench in a semiconductor body. This design incorporates a dielectric layer along the trench's sidewalls, which varies in thickness to improve programming speed by creating a higher electric field in the gate oxide. The second patent outlines an EEPROM cell that utilizes a similar trench structure, where a drain region is positioned alongside the upper portion of the trench sidewall, and a source region is located at the lower portion. This configuration allows for programming through hot electron injection and erasing via Fowler Nordheim tunneling, resulting in a compact and efficient EEPROM cell.

Career Highlights

Throughout his career, Di-Son Kuo has worked with prominent companies such as North American Philips Corporation and Philips Electronics North America Corporation. His work in these organizations has contributed to the development of advanced memory technologies.

Collaborations

Kuo has collaborated with notable professionals in the field, including Satyendranath Mukherjee and Len-Yuan Tsou. These collaborations have further enriched his work and innovations in EEPROM technology.

Conclusion

Di-Son Kuo's contributions to EEPROM technology have established him as a significant figure in the field of memory innovation. His patents reflect a commitment to enhancing the performance and reliability of memory devices.