Dazheng Chen

Title: Dazheng Chen: Innovator in Field Effect Transistor Technology

Introduction

Dazheng Chen is a prominent inventor based in Xi'an, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced field effect transistors. His innovative work addresses critical challenges in the industry, showcasing his expertise and dedication to research.

Latest Patents

Dazheng Chen holds a patent for a "Bidirectional blocking monolithic heterogeneous integrated cascode-structure field effect transistor, and manufacturing method thereof." This invention primarily solves the issue of the existing monolithic heterogeneous integrated cascode-structure field effect transistors lacking reverse blocking characteristics. The design includes a substrate, a GaN buffer layer, an AlGaN barrier layer, and a SiN isolation layer. An isolation groove is etched in the middle of the SiN isolation layer, allowing for the preparation of a Si metal oxide semiconductor field effect transistor on one side and a GaN high-electron-mobility transistor on the other side. This innovative structure enables the formation of a bidirectional blocking monolithic heterogeneous integrated cascode-structure field effect transistor.

Career Highlights

Dazheng Chen is affiliated with Xidian University, where he continues to advance his research in semiconductor technologies. His work has garnered attention for its potential applications in various electronic devices, enhancing their performance and efficiency.

Collaborations

Dazheng Chen collaborates with notable colleagues, including Chunfu Zhang and Weihang Zhang. Their combined expertise contributes to the innovative research environment at Xidian University.

Conclusion

Dazheng Chen's contributions to the field of field effect transistors exemplify his commitment to innovation and research. His patented technology addresses significant challenges in the industry, paving the way for advancements in semiconductor applications.