David R Urech

Title: David R Urech: Innovator in Submicron Technology

Introduction

David R Urech is a notable inventor based in Columbia, MD (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for forming submicron width metal lines.

Latest Patents

Urech holds a patent for a "Single step lift-off technique for submicron gates." This innovative method involves several steps, including coating a substrate with a layer of photoresist, baking the layer, exposing it to a pattern, soaking it in a chlorobenzene solution, and developing the layer to create openings. The process continues with baking to remove residual chlorobenzene, exposing the layer to deep ultraviolet radiation, and baking again to allow the layer to flow at the edges of the openings. Finally, metal is deposited on the layer and substrate, and the layer is dissolved to lift off the metal deposited on it, leaving the metal on the substrate intact. This invention effectively addresses the challenge of forming submicron width metal lines from one micron openings in a photoresist layer.

Career Highlights

Urech is currently associated with AlliedSignal Inc., where he applies his expertise in semiconductor fabrication techniques. His work has been instrumental in advancing the capabilities of microelectronics.

Collaborations

Throughout his career, Urech has collaborated with talented individuals such as Mohammed A Fathimulla and Thomas C Loughran. These collaborations have contributed to the successful development of innovative technologies in the semiconductor industry.

Conclusion

David R Urech's contributions to the field of semiconductor technology, particularly through his patented methods, highlight his role as an influential inventor. His work continues to impact the advancement of microelectronics and submicron technology.