David R Staab

Title: The Innovations of David R. Staab

Introduction

David R. Staab is a notable inventor based in San Jose, California. He has made significant contributions to the field of integrated circuits, particularly in the area of CMOS technology. With a total of 2 patents, his work has had a lasting impact on the industry.

Latest Patents

One of Staab's latest patents is titled "CMOS circuitry with shortened P-channel length on ultrathin silicon." This patent describes an integrated circuit that includes an insulating substrate and a layer of silicon. It features a p-channel transistor and an n-channel transistor interconnected in a CMOS circuit, where the ratio of the p-channel length to the n-channel length is less than or equal to one.

Another significant patent is "Method and structure for providing ESD protection for silicon on." This invention outlines a method and structure for providing electrostatic discharge (ESD) protection for Silicon-On-Insulator (SOI) integrated circuits. The ESD protection circuit includes an electrically conductive pad and a first conductor segment fabricated over an insulating layer. This design enhances the protection of input, output, and I/O pins of an SOI integrated circuit while promoting high-speed signal transfer.

Career Highlights

Throughout his career, David R. Staab has worked with prominent companies in the semiconductor industry, including Peregrine Semiconductor Corporation and Xilinx, Inc. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking technologies.

Collaborations

Staab has collaborated with notable professionals in the field, including Richard M. Greene and Mark L. Burgener. These partnerships have further enriched his work and innovations.

Conclusion

David R. Staab's contributions to the field of integrated circuits and his innovative patents demonstrate his expertise and commitment to advancing technology. His work continues to influence the industry and inspire future innovations.