Brightwood, VA, United States of America

David M Hutcheson


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2022

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1 patent (USPTO):

Title: Spotlight on Inventor David M. Hutcheson

Introduction

David M. Hutcheson is an innovative inventor based in Brightwood, VA, renowned for his contributions to technology in the field of memory systems. With a focus on enhancing the robustness of synchronous Dynamic Random Access Memory (DRAM), his work aims to improve the reliability of electronic systems in challenging environments.

Latest Patents

Hutcheson holds a patent for a novel "Method for Radiation Hardening Synchronous DRAM." This invention implements Error Detection And Correction (EDAC) on-chip, enhancing the performance and reliability of DRAM in environments susceptible to radiation. The patented method features a configuration where each bank consists of multiple interleaved Static Random Access Memory (SRAM) cells, coupled with bit registers designed to interface efficiently with these SRAM cells. The system includes a first column multiplexer that selectively accesses bit registers, as well as a second multiplexer that manages data flow during WRITE or READ bursts, ensuring data integrity through robust error correction mechanisms.

Career Highlights

David M. Hutcheson is currently employed by BAE Systems Information and Electronic Systems Integration Inc., a leading company known for its advanced technology solutions and defense systems. His expertise has been pivotal in advancing the capabilities of electronic memory systems.

Collaborations

Throughout his career, Hutcheson has collaborated closely with talented professionals, including coworkers Jason F. Ross and John R. Foster. Together, they have contributed to significant advancements in electronic systems, particularly in enhancing the resilience of memory technology against adverse conditions.

Conclusion

David M. Hutcheson exemplifies the spirit of innovation within the realm of technology. His patent on radiation hardening DRAM not only showcases his inventive prowess but also sets a benchmark for future developments in the industry. As technology continues to evolve, inventors like Hutcheson will play a crucial role in shaping the future of electronic systems and their applications in various fields.

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