David John Wallis

Title: David John Wallis: Innovator in Semiconductor Technology

Introduction

David John Wallis is a notable inventor based in Cambridge, GB. He has made significant contributions to the field of semiconductor technology, particularly in the development of group III-nitride materials. With a total of 2 patents, Wallis has established himself as a key figure in this innovative sector.

Latest Patents

One of Wallis's latest patents involves a method for manufacturing a semiconductor structure that includes an (001) oriented zincblende structure group III-nitride layer, such as GaN. This layer is formed on a 3C-SiC layer on a silicon substrate. The process includes the formation of a nucleation layer, which is then recrystallized. The zincblende structure group III-nitride layer is subsequently formed by MOVPE at temperatures ranging from 750-1000°C, achieving a thickness of at least 0.5 micrometers. The resulting semiconductor structure is characterized by XRD, demonstrating that the majority, if not all, of the layer is composed of zincblende structure group III-nitride rather than wurtzite structure group III-nitride.

Career Highlights

Throughout his career, Wallis has worked with several prominent companies, including Cambridge Enterprise Limited and Anvil Semiconductors Limited. His work has been instrumental in advancing semiconductor technologies and applications.

Collaborations

Wallis has collaborated with notable professionals in the field, including Martin Frentrup and Menno Johannes Kappers. These collaborations have further enriched his contributions to semiconductor research and development.

Conclusion

David John Wallis is a distinguished inventor whose work in semiconductor technology has led to significant advancements in the field. His innovative methods and collaborations continue to influence the industry positively.