Company Filing History:
Years Active: 2025
Title: Innovations by David Jauernig in Battery Technology
Introduction
David Jauernig is an accomplished inventor based in Fremont, CA (US). He has made significant contributions to the field of battery technology, particularly in the estimation of battery state of health (SOH). His innovative approach has the potential to enhance the performance and longevity of battery systems.
Latest Patents
David Jauernig holds a patent for an "Apparatus and method for battery SOH estimation, method for forming a 2D-LUT thereof." This invention includes a DV-calculation unit configured for calculating charge-derivative voltage dV/dQ according to the operating parameters of a battery. It also features a detection unit for performing peak and threshold detection based on the filtered charge-derivative voltage dV/dQ. This allows for the detection of features that meet specific requirements defined by a typical state of charge (SOC) range and height interval of a center graphite peak. Additionally, it calculates the average temperature of the battery during a time interval corresponding to the detected feature and performs a SOH estimate through a 2D-Look-Up-Table (2D-LUT) based on the detected feature and the average temperature.
Career Highlights
David is currently employed at Gotion, Inc., where he continues to develop innovative solutions in battery technology. His work focuses on improving the efficiency and reliability of battery systems, which is crucial for various applications, including electric vehicles and renewable energy storage.
Collaborations
David collaborates with talented professionals such as Trevor Jones and Xiaojun Li, who contribute to the advancement of battery technology alongside him.
Conclusion
David Jauernig's contributions to battery technology through his innovative patent demonstrate his commitment to enhancing battery performance and reliability. His work at Gotion, Inc. and collaborations with skilled colleagues further underscore his impact in this vital field.