Albuquerque, NM, United States of America

David J Ortley

USPTO Granted Patents = 7 

Average Co-Inventor Count = 2.8

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2023-2025

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7 patents (USPTO):Explore Patents

Title: The Innovative Contributions of David J Ortley

Introduction

David J Ortley is a notable inventor based in Albuquerque, NM, with a significant portfolio of six patents. His work primarily focuses on advancements in blast exposure assessment and analysis, contributing to safety and efficiency in various applications.

Latest Patents

Ortley's latest patents include a "Blast Exposure Assessment System," which is a method, system, and computer-readable media designed to analyze blast exposure data. This innovation identifies, flags, and removes spurious data features from pressure data received from blast sensors. The system groups pressure data sets based on waveform features to determine incident overpressure parameters associated with blast exposure events. Another significant patent is the "Blast Triangulation," which involves collecting blast exposure data from multiple sensors and performing an analysis to identify the source of a blast exposure event. This system allows for real-time notifications to operators regarding blast exposure events.

Career Highlights

David J Ortley has made substantial contributions to the field of blast exposure analysis through his work at Applied Research Associates, Inc. His innovative approaches have enhanced the understanding and management of blast exposure risks, making significant strides in safety protocols.

Collaborations

Ortley collaborates with talented individuals such as Suthee Wiri and Charles E Needham, who contribute to the development and refinement of his innovative projects.

Conclusion

David J Ortley's contributions to blast exposure assessment and analysis exemplify the impact of innovation in enhancing safety measures. His patents reflect a commitment to advancing technology in this critical field.

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