Company Filing History:
Years Active: 1985
Title: The Innovative Contributions of David E Iglesias in Semiconductor Technology
Introduction
David E Iglesias is a notable inventor based in Basking Ridge, NJ, whose work has significantly impacted the field of semiconductor technology. With one patent to his name, his innovation focuses on enhancing the power handling capabilities of III-V semiconductor devices, pushing the boundaries of what is possible in modern electronics.
Latest Patents
Iglesias holds a patent for a high-power III-V semiconductor device, which includes devices such as MESFET, JFET, MOSFET, and IGFET. His patent outlines a design that incorporates relatively high-ohmic gates and wide gate finger widths, maximizing the utilization of the semiconductor surface. Specifically, his innovation employs aluminum gate electrodes with a cross-sectional area of 1.2 square micrometers and a length of 300 micrometers or more. This design has resulted in devices with unexpectedly high power handling capability, marking a significant advancement in the performance of semiconductor devices.
Career Highlights
David E Iglesias has made significant contributions to the field of electrical engineering during his career at AT&T Bell Laboratories. His work is characterized by a relentless pursuit of innovation, as evidenced by his successful patent application and its implications for future developments in semiconductor technology. His contributions have not only established him as a key figure within his organization but have also positioned him as an influencer in the broader technology landscape.
Collaborations
Iglesias has collaborated with notable colleagues like Christopher L Allyn and Peter G Flahive, who have also contributed to advancements in semiconductor technologies. These collaborations have fostered an environment of innovation and knowledge sharing, essential for the development and realization of cutting-edge technologies.
Conclusion
David E Iglesias exemplifies the spirit of innovation necessary to drive progress in the field of semiconductor technology. His contributions through his patent for high-power III-V semiconductor devices have set new benchmarks in performance and efficiency. As technology continues to evolve, the impact of his work will undoubtedly inspire future generations of inventors and engineers.