Sunnyvale, CA, United States of America

David Badt

USPTO Granted Patents = 2 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 1999-2000

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2 patents (USPTO):Explore Patents

Title: Innovations by David Badt in Tungsten Silicide Processing

Introduction

David Badt is an accomplished inventor based in Sunnyvale, CA. He has made significant contributions to the field of chemical vapor deposition (CVD) technology, particularly in minimizing stress in tungsten silicide films. With a total of 2 patents, his work has implications for various applications in semiconductor manufacturing.

Latest Patents

David Badt's latest patents focus on innovative methods for minimizing as-deposited stress in tungsten. One patent describes an apparatus and methods for processing substrates in a CVD reactor system. This method involves the use of preflow and postflow of reducing gases before and after deposition steps. This ensures that a tungsten-rich film is not deposited at the interface of the tungsten silicide film to the substrates or on the tungsten silicide film at the end of deposition processing. Additionally, for systems with a remote gas injection and flow control system, an isolation valve is included in the gas supply manifold. This valve is held closed during specific times between deposition sequences to enhance the quality of the deposited films.

Another patent by Badt elaborates on methods for minimizing as-deposited stress in tungsten silicide films. Similar to the first, it emphasizes the importance of preflow and postflow of reducing gases to prevent unwanted tungsten-rich deposits. This innovative approach is crucial for improving the performance and reliability of semiconductor devices.

Career Highlights

David Badt is currently employed at Genus, Inc., where he continues to develop cutting-edge technologies in the semiconductor industry. His expertise in CVD processes has positioned him as a valuable asset to his company and the broader field of materials science.

Collaborations

Throughout his career, David has collaborated with notable colleagues, including Sien G Kang and John Y Adachi. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

David Badt's contributions to the field of tungsten silicide processing through his patents demonstrate his commitment to advancing semiconductor technology. His innovative methods and collaborative spirit continue to influence the industry positively.

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