Company Filing History:
Years Active: 1992
Title: The Innovations of David A. Wharam
Introduction
David A. Wharam is a notable inventor based in Munich, Germany. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on electronic devices that utilize advanced semiconductor materials.
Latest Patents
David A. Wharam holds a patent for an innovative semiconductor apparatus. This device features a split-gate semiconductor design that includes a first layer of undoped semiconductor material, such as Gallium Arsenide (GaAs), and a second layer of doped semiconductor material, like Aluminum Gallium Arsenide (AlGaAs). The unique configuration of these layers forms a heterojunction, allowing for the formation of a two-dimensional electron gas. The device is designed to exhibit negative resistance, making it suitable for use as an oscillator or detector operating in the terahertz range.
Career Highlights
Wharam is currently employed at General Electric Company, where he continues to advance his research in semiconductor technology. His work has garnered attention for its potential applications in various electronic devices.
Collaborations
Throughout his career, David A. Wharam has collaborated with esteemed colleagues, including Michael J. Kelly and Michael Pepper. These partnerships have contributed to the development of innovative technologies in the semiconductor field.
Conclusion
David A. Wharam's contributions to semiconductor technology highlight his role as a leading inventor in the industry. His innovative patent demonstrates the potential for advancements in electronic devices.