David A Hanson

Title: David A. Hanson: Innovator in Semiconductor Fabrication

Introduction

David A. Hanson is a notable inventor based in Apple Valley, MN (US). He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of high-performance bipolar transistors. His innovative methods have paved the way for advancements in electronic devices.

Latest Patents

David A. Hanson holds a patent for a "Single layer poly fabrication method and device with shallow." This method focuses on fabricating high-performance bipolar transistors using a single polycrystalline silicon layer. The technique allows for the achievement of horizontally and vertically scaled base/emitter junctions. In this process, a composite sandwich of overlying layers of poly silicon, oxide, and nitride is deposited over a substrate containing field oxide isolated monocrystalline transistor sites. The method ensures proper horizontal extrinsic base to emitter spacings and shallow vertical intrinsic base to emitter junctions through controlled thickness and selective oxidation.

Career Highlights

David A. Hanson is associated with Sperry Corporation, where he has applied his expertise in semiconductor fabrication. His work has contributed to the development of advanced electronic components that are essential in modern technology.

Collaborations

One of his notable coworkers is Timothy M. Lindenfelser, with whom he has collaborated on various projects within the semiconductor field.

Conclusion

David A. Hanson is a distinguished inventor whose work in semiconductor fabrication has had a lasting impact on the industry. His innovative methods continue to influence the development of high-performance electronic devices.