Daniel S Pickard

Title: Innovations of Daniel S Pickard

Introduction

Daniel S Pickard is an accomplished inventor based in Palo Alto, CA. He holds 2 patents that showcase his expertise in the field of semiconductor technology and plasma generation. His innovative contributions have made significant impacts in various applications.

Latest Patents

One of his latest patents is titled "Matching network for RF plasma source." This invention involves a compact matching network that effectively couples an RF power supply to an RF antenna in a plasma generator. The design features a simple and compact impedance matching network that aligns the plasma load with the impedance of a coaxial transmission line and the output impedance of an RF amplifier at radio frequencies. The matching network consists of a resonantly tuned circuit made up of a variable capacitor and an inductor in a series resonance configuration, along with a ferrite core transformer coupled to the resonantly tuned circuit. This compact design allows it to fit into existing focused ion beam systems.

Another notable patent is "Electron bombardment of wide bandgap semiconductors for generating high brightness and narrow energy spread emission electrons." This invention describes a semiconductor source of emission electrons that utilizes a target of a wide bandgap semiconductor. The target thickness is measured from an illumination surface to an emission surface. The semiconductor source is designed with an arrangement to produce and direct a beam of seed electrons at the illumination surface, along with a mechanism to control the energy of these seed electrons. This ensures that the energy is sufficient to generate electron-hole pairs in the target, with a fraction of these pairs supplying the emission electrons. The invention optimizes the target thickness and seed electron energy to ensure that the emission electrons are substantially thermalized, further enhanced by generating negative electron affinity at the emission surface.

Career Highlights

Daniel has worked at prestigious institutions such as the University of California and Leland Stanford Junior University. His work has contributed to advancements in semiconductor technology and plasma applications.

Collaborations

He has collaborated with notable colleagues, including Ka-Ngo Leung and R Fabian W Pease, further enriching his research and innovation endeavors.

Conclusion

Daniel S Pickard's contributions to the field of semiconductor technology and plasma generation through his patents reflect his innovative spirit and dedication to advancing technology. His work continues to influence various applications in the industry.