Lawrenceville, NJ, United States of America

Daniel R Hines



Average Co-Inventor Count = 4.8

ph-index = 4

Forward Citations = 244(Granted Patents)


Company Filing History:


Years Active: 1992-2005

Loading Chart...
Loading Chart...
5 patents (USPTO):Explore Patents

Title: The Ingenuity of Daniel R. Hines

Introduction

Daniel R. Hines, a notable inventor based in Lawrenceville, NJ, holds an impressive portfolio of five patents. His work is largely centered around advancements in semiconductor technology, particularly focused on enhancing magnetoresistance properties.

Latest Patents

Among his latest patents, Hines has developed a method and system for finite element modeling and simulation of enhanced magnetoresistance in thin film semiconductors with metallic inclusions. This invention employs finite element analysis to assess device characteristics under varying magnetic fields and geometries, ultimately leading to refined semiconductor device modifications based on predetermined qualities.

Another significant patent describes extraordinary magnetoresistance (EMR) observed at room temperature in inhomogeneous narrow-gap semiconductors. Using a symmetric van der Pauw disk configuration of indium antimonide with embedded inhomogeneities like gold, Hines' research indicates remarkable EMR levels of up to 750,000% at specific magnetic field strengths. His findings elucidate how current deflection around varying material inhomogeneities influences resistance, paving the way for practical applications in magnetic sensors through simplified manufacturing processes.

Career Highlights

Hines boasts a distinguished career, having contributed his expertise to leading organizations such as Schlumberger Technology Corporation and NEC Laboratories America, Inc. His innovative mindset has consistently driven advancements in the field of semiconductor research.

Collaborations

Throughout his career, Hines has collaborated with esteemed professionals like Oliver Clinton Mullins and Masaru Niwa. These partnerships have further enhanced his contributions to the field, showcasing the importance of teamwork in driving innovation.

Conclusion

Daniel R. Hines exemplifies the spirit of innovation in the semiconductor industry through his pioneering patents and collaborations. His work continues to influence the development of advanced materials and technologies, ensuring a significant impact on future research and applications.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…