Daniel Pobig

Title: Biography of Inventor Daniel Pobig

Introduction

Daniel Pobig is a notable inventor based in Unterhaching, Germany. He has made significant contributions to the field of semiconductor technology, holding three patents to his name. His work focuses on innovative semiconductor devices that enhance performance and efficiency.

Latest Patents

Among his latest patents is a semiconductor device featuring a drain structure and a metal drain electrode. This invention includes transistor cells formed along a first surface of a semiconductor body, with body regions of a first conductivity type and a drift region of a second conductivity type. The design incorporates an emitter layer with a higher dopant concentration than the drift region, along with a metal drain electrode that adjoins the emitter layer. Another patent describes a semiconductor device that includes a drain structure forming first pn junctions with body regions of the transistor cells, further enhancing the functionality of semiconductor devices.

Career Highlights

Daniel Pobig is currently employed at Infineon Technologies Austria AG, where he continues to innovate in the semiconductor industry. His expertise in semiconductor devices has positioned him as a key contributor to the company's research and development efforts.

Collaborations

Throughout his career, Daniel has collaborated with esteemed colleagues such as Enrique Vecino Vazquez and Franz Hirler. These collaborations have fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Daniel Pobig's contributions to semiconductor technology