Company Filing History:
Years Active: 2021
Title: **Innovator Spotlight: Daniel Max Dryden**
Introduction
Daniel Max Dryden, based in Oakland, California, is a notable inventor recognized for his contributions in the field of materials science. With a focus on enhancing the characteristics of Group-III-nitride materials, Dryden has made significant strides in the domain of impurity doping. His innovative approach not only showcases his expertise but also underscores the potential advancements in semiconductor technologies.
Latest Patents
Dryden holds a patent for "Gallidation assisted impurity doping." This invention details a structure that incorporates a material of Group-III-nitride having a dopant. A key feature of this patent is the concentration gradient of the dopant, which allows diffusion inward from a portion of the surface of the structure in a direction substantially normal to the surface. Remarkably, this structure maintains less than 1% decomposition of the Group-III-nitride at its surface.
Career Highlights
Daniel Max Dryden is a valued team member at Lawrence Livermore National Security, LLC, where he continues to push the boundaries of innovation. His career is marked by a commitment to research and development in materials that have far-reaching implications for various technological applications.
Collaborations
Dryden collaborates with esteemed colleagues, including Lars F. Voss and Clint Frye. Together, they contribute to the cutting-edge research at their organization, enhancing the capabilities and applications of their patented technologies.
Conclusion
Daniel Max Dryden exemplifies the spirit of innovation through his inventive contributions to materials science. His work, particularly in impurity doping of Group-III-nitride materials, represents a significant advancement in the field, with implications for future technological developments. As he continues his career at Lawrence Livermore National Security, LLC, his ongoing research and collaborations are sure to influence the landscape of semiconductor technology.