Mercerville, NJ, United States of America

Daniel J Szostak


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 25(Granted Patents)


Company Filing History:


Years Active: 1983

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1 patent (USPTO):Explore Patents

Title: The Innovations of Daniel J. Szostak

Introduction

Daniel J. Szostak is a notable inventor based in Mercerville, NJ (US). He has made significant contributions to the field of semiconductor technology, particularly in understanding minority carrier diffusion lengths. His work has implications for the development of more efficient semiconductor materials.

Latest Patents

Daniel J. Szostak holds a patent titled "Method and apparatus for determining minority carrier diffusion length." This invention provides a method for determining the diffusion length of minority carriers in semiconductor materials, especially in amorphous silicon. The patent describes a constant-magnitude surface-photovoltage (SPV) method that utilizes unmodulated illumination to generate SPV on the surface of the material. A servo system maintains a constant predetermined value of the SPV, while a vibrating Kelvin method-type probe electrode couples the SPV to a measurement system. The invention also includes an adjustable monochromator to measure illumination intensity across various wavelengths, allowing for accurate determination of the minority carrier diffusion length.

Career Highlights

Daniel J. Szostak has had a distinguished career, working at RCA Inc., where he has contributed to advancements in semiconductor technology. His innovative approaches have helped enhance the understanding of carrier dynamics in semiconductor materials.

Collaborations

Throughout his career, Szostak has collaborated with notable colleagues, including Bernard Goldstein and Joseph Dresner. These collaborations have fostered a productive environment for innovation and research.

Conclusion

Daniel J. Szostak's contributions to semiconductor technology through his patent and collaborative efforts highlight his role as a significant inventor in the field. His work continues to influence advancements in semiconductor materials and their applications.

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